| PART |
Description |
Maker |
| CM900HG-90H |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM200HG-130H |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM1200HC-66H |
HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM1200HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM400HB-90H |
2nd-Version HVIGBT Modules
|
Mitsubishi Electric
|
| MDD142 MDD142-18N1 MDD142-08N1 MDD142-12N1 MDD142- |
Thyristor and Rectifiers Modules
HIgh Power Diode Modules 165 A, 800 V, SILICON, RECTIFIER DIODE
HIgh Power Diode Modules 165 A, 1800 V, SILICON, RECTIFIER DIODE
HIgh Power Diode Modules 165 A, 1400 V, SILICON, RECTIFIER DIODE
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| TM130RZ-24 TM130GZ-24 TM130GZ-2H TM130RZ-2H TM130E |
THYRISTOR MODULES HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM50C1A-XXS RM50DA-C1A-XXS RM50DA/CA/C1A-XXS RM50C |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| MDD312 |
High Power Diode Modules
|
IXYS Corporation
|
